P-Well CMOS Procees SPICE Parameters

[tarook79]

Hoi,
Ik ben momenteel bezig met het ontwerpen van een route die moet worden uitgevoerd met behulp van P-Well CMOS proces.
Heeft iemand SPICE parameters van de transistoren voor dergelijk proces voor de overdracht van technologie van 0,5 micrometer of minder?

 

[Jake]

hier is het, csmc05
. model NVP PBO's
niveau = 49
*
* ALGEMENE PARAMETERS
*
lmin = 5.5e-7 lmax = 2.0e-5 wmin = 6.0e-7 WMAX = 2.0e-5
Tref = 27,0
versie = 3.2
tox ='1 ,27 E-08 toxpn '
toxm = 1.27e-08
xj = 2.0000000e-07
nch = 3.9211000e 16
LLN = 0.1718000
lwn = 1.0000000
wln = 0.9096138
WWN = 1.9640454
pluisvrije =-2.9392644e-10
ll = 4.8657780e-09
lw = 0,00
LWL = 3.2949680e-16
wint = 1.5321000e-07
wl =-3.1177917e-14
WW =-3.5282190e-20
WWL = 0,00
mobmod = 1
binunit = 2
XL ='0 ,00 E 00 xlpn '
XW ='0 ,00 E 00 xwpn '
lmlt = 1
wmlt = 1
binflag = 0
dwg =-7.5196240e-09
DWB =-8.8500040e-10
* GELUIDSOVERLAST modelparameters
noimod = 2
NoiA = 8.03959410758594E 18
NoiB = 22750
NoiC = 0,00000000000324
Ef = 1.204
Em = 1840676.27288843
* Diode PARAMETERS
acm = 2
ldif = 0,00
hdif = 6.00e-07
rsh = 169
e = 0
rs = 0
RSC = 0
RDC = 0
*
* DREMPELPRIJS SPANNINGSGRENZEN PARAMETERS
*
vth0 = '-9.73E-01 vthpn'
k1 = 0.4109161
K2 = 1.9222172e-02 lk2 =-3.4000000e-08
K3 = 4.7544390
dvt0 = 1.9507611
dvt1 = 0.9552611
dvt2 = 0.2375000
dvt0w = 1.5924101
dvt1w = 1.6596450e 06
dvt2w = 2.0000000e-02
nlx = 9.4674930e-09
w0 =-4.4366630e-09
K3b = -1,7572563
ngate = 1.0000000e 30
VfB = -0,1524965
*
* MOBILITEIT PARAMETERS
*
VSAT = 1.1421400e 05 pvsat = 2.8353107e-09
ua = 4.2156900e-09 pua =-5.7302530e-23
UB =-6.2567930e-19
uc =-6.5204860e-11
rdsw = 7.5183910e 02
prwb = -0,1286000
prwg = 1.5611597e-02
WR = 0.9781416
u0 = 2.5887955e-02
a0 = 0.9554556
keta =-1.3701160e-02
A1 = 0.00
A2 = 0.4000000
AGS = 0.1720220 loopt = 2.2507542e-07
b0 = 6.5099060e-07
b1 = 1.4520109e-06
*
* SUBTHRESHOLD huidige parameters
*
VOFF =-9.9300000e-02
nfactor = 0.8502510
cit = 2.4700000e-09
cdsc = 9.0727240e-06
cdscb =-1.5753420e-05
cdscd = 1.2948903e-03
eta0 = 0.3668273
etab =-4.1721060e-03
dsub = 0.7021100
*
* Rout PARAMETERS
*
pclm = 2.7501225
pdiblc1 = 1.0000000e-05
pdiblc2 = 7.5469860e-03
pdiblcb = -0,1250000
drout = 3.0000000
pscbe1 = 5.0336000e 08
pscbe2 = 4.5000000e-07
pvag = 1.0000000
delta = 1.0000000e-02
alpha0 = 0,00
alpha1 = 0,00
beta0 = 30.0000000
*
* Temperatuureffecten PARAMETERS
*
kt1 = -0,5000000
kt2 =-5.7841390E-02
Op = 1.1792727E 02
Ute = -1,4499991
Ua1 = 2.5594273E-09
Ub1 =-8.0262190E-18
Uc1 = 4.5520970E-11
Kt1l = 8.9438480E-09
Prt =-8.2061230E 02
*
* Capacitieve PARAMETERS
*
cj ='9 ,27 E-04 cjpn '
MJ = 0,3928
pb = 0,7557
cjsw ='3 ,02 E-10 cjswpn '
mjsw = 0,1841
php = 0,5105
cjgate ='5 e ,0301-10 cjgatepn '
TPB = 0.0022064
tpbsw = 9.7723e-04
tcj = 7.3374e-04
tcjsw =-7.2026e-04
js = 1.00e-04
jsw = 0,00
n = 1,0
XTi = 3.0
cgdo ='3 ,49 E-10 cgdopn '
cgso ='3 ,49 E-10 cgsopn '
cgbo = 1.0e-13
capmod = 2
nqsmod = 0
iep = 5
xpart = 0
cgsl =-2.4300000e-17
cgdl =-2.4300000e-17
ckappa = 0.6000000
CF = 0,00
CLC = 5.0000000e-12
CLE = 2.3309000
DLC =-2.43e-17
dwc =-2.43e-17
vfbcv = -0,0871
LLC = 0
lwc = 0
WLC = 0
WWC = 0
lwlc = 0
wwlc = 0
Moin = 15
noff = 1
voffcv = 0

 

[tarook79]

Hoi,
De parameters die je hebt gepost zijn voor PBO's transistor.
Heeft u de parameters van NMOs transistor in een P-proces Nou en?